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Growth of chromium-doped zinc selenide thin films by pulsed laser deposition for mid-infrared applications photoluminescence (PL) measurements over the 2-3 μm mid-IR spectral range. This was the first demonstration of PL measurements from PLD grown Cr2+:ZnSe thin films. The second objective was to demonstrate mid-IR lasing from PLD grown Cr2+:ZnSe based thin film structures. The first demonstration of 2.63 μm mid-IR lasing in a Cr2+:ZnSe thin film planar waveguide structure developed using PLD is presented in this dissertation research. Mid-IR lasing oscillation within a planar waveguide, achieved through the deposition of a highly doped Cr2+:ZnSe film on sapphire substrate, was obtained at room temperature under gain-switched optical excitation. Highly doped Cr2+:ZnSe thin films were also used to demonstrate passive Q-switching of Er-doped YAG laser operating at 1.645 μm. The third objective was to develop Cr2+:ZnSe-based thin film electroluminescent structures by PLD. Significant progress was made in the development of thin film structure designs that shows promising results for the impending successful demonstration of mid-IR electroluminescence.

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